ait semiconductor inc. www.ait - ic.com a g2008 mosfet/igbt gate driver high and low side driver rev1.0 - nov 201 7 released - - 1 - description features the ag2008 is a high voltage, high speed power mosfet and igbt driver based on p_sub p_epi process. the floating channel driver can be used to drive two n - channel power mosfet or igbt independently which o perates up to 600 v. logic inp uts are compatible with standard cmos or lsttl output, down to 3.3v logic. the output drivers feature a high pulse current buffer stage designed for minimum driver cross - conduction. propagation delays are matched to simplify use in high frequency applicat ions. it has two versions ag2008 - a & ag2008 - b. ag2008 is available in a sop8 package. ? fully operational to +600 v ? 3.3 v logic compatible ? dv/dt immunity 50 v/nsec ? floating channel designed for bootstrap operation ? gate drive supply range from 10.5v to 20 v ? uvl o for both channels ? output source / sink current capability 450ma /900ma (at vcc = 15v) ? independent logic inputs to accommodate all topologies ? - 5v negative vs ability ? matched propagation delay for both channels ? a vailable in a sop8 package . ordering inform ation application package type part number sop8 spq: 4,000 pcs/reel m8 ag2008m8r - z ag2008m8vr - z note v: halogen free package z: a=lin; b= r: tape & reel ait provides all rohs products ? small and medium - power motor driver ? pow er mosfet or igbt driver ? half ? bridge power converters ? full - bridge power converters ? any complementary drive converters typical application circuit lin
ait semiconductor inc. www.ait - ic.com a g2008 mosfet/igbt gate driver high and low side driver rev1.0 - nov 201 7 released - - 2 - pin description top view pin # symbol function 1 v cc low side and main power supply 2 h in logic input for high side gate driver output (ho) 3 lin( ) logic input for low side gate driver output (lo) 4 com ground 5 lo low side gate drive output a version: in phase with lin , b version: out of phase with lin 6 v s high side floating supply return or bootstrap return 7 ho high side gate drive output, in phase with hin 8 v b high side floating supply lin
ait semiconductor inc. www.ait - ic.com a g2008 mosfet/igbt gate driver high and low side driver rev1.0 - nov 201 7 released - - 3 - absolute maximum ratings v b , high side floating supply - 0.3v ~ 622 v v s , high side floating supply return v b - 22 v ~ v b + 0.3 v v ho , high side gate drive output v s - 0.3 v ~ v b + 0.3 v v cc , low side and main power supply - 0.3 v ~ 22 v v lo , low side gate drive output - 0.3 v ~ v cc + 0.3 v v in , logic input of hin & lin - 0.3 v ~ v cc + 0.3 v esd, hbm model 2.5kv esd, machine model 200v p d , package power dissipation @ t a 25 c sop8 0.625w rth ja , thermal resistance junction to ambient sop8 200 /w t j , junction temperature 150 t s , storage temperature - 55 ~150 t l , lead temperature (soldering, 10 seconds) 300 stress beyond above listed absolute maximum ratings may lea d permanent damage to the device. these are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. exposure to absolute maximum rating cond itions for extended periods may affect device reliability. recommended operating conditions parameter symbol min. max. units high side floating supply v b v s +10.5 v s +20 v high side floating supply return v s - 600 v high side gate drive output voltage v ho v s v b v low side supply v cc 10.5 20 v low side gate drive output voltage v lo 0 v cc v logic input voltage(hin & lin) v in 0 v cc v ambient temperature t a - 40 125
ait semiconductor inc. www.ait - ic.com a g2008 mosfet/igbt gate driver high and low side driver rev1.0 - nov 201 7 released - - 4 - electrical characteristics v bias (v cc , v bs ) = 15v, c l = 10 00 pf and t a = 25 c , unle ss otherwise specified. parameter symbol conditions min typ . max units dynamic electrical characteristics high side turn - on propagation delay t onh - 170 240 ns high side turn - off propagation delay t offh - 170 240 low side turn - on propagation delay t onl - 170 240 low side t urn - off propagation delay t offl - 170 240 delay matching mt - - 50 turn - on rise time t r - 50 90 turn - off fall time t f - 30 80 static electrical characteristics logic ih 2.5 - - v logic il - - 0.8 high le vel output voltage, v bias - v o v oh - - 0.3 low level output voltage, v o v ol - - 0.3 quiescent v cc supply current i qcc - 160 2 2 0 b supply current i qb - 80 150 leakage current from v s (600v) to gnd i lk - - 50 logic in + - 6 10 logic in - - 1 2 v bs supply uvlo threshold v bsu + - 10.0 - v v bsu - - 9.4 - v cc supply uvlo threshold v ccu + - 10.0 - v ccu - - 9.4 - output high short circuit pulsed current i o + - 450 - ma output l ow short circuit pulsed current i o - - 900 -
ait semiconductor inc. www.ait - ic.com a g2008 mosfet/igbt gate driver high and low side driver rev1.0 - nov 201 7 released - - 5 - block diagram
ait semiconductor inc. www.ait - ic.com a g2008 mosfet/igbt gate driver high and low side driver rev1.0 - nov 201 7 released - - 6 - detailed information 1. logic function 2. timing spec
ait semiconductor inc. www.ait - ic.com a g2008 mosfet/igbt gate driver high and low side driver rev1.0 - nov 201 7 released - - 7 - package information dimension in sop8 (unit: mm) symbol min . max . a - 1.75 a1 0.10 0.225 a2 1.30 1.50 a3 0.60 0.70 b 0.39 0.48 b1 0.38 0.43 c 0.21 0.26 c1 0.19 0.21 d 4.70 5.10 e 5.80 6.20 e1 3.70 4.10 e 1.27 bsc h 0. 25 0. 5 0 l 0.50 0.80 l1 1.05 bsc
ait semiconductor inc. www.ait - ic.com a g2008 mosfet/igbt gate driver high and low side driver rev1.0 - nov 201 7 released - - 8 - important notice ait semiconductor inc. (ait) reserves t he right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. ait semiconductor inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. use of ait products in such applications is understood to be fully at the risk of the customer. as used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. in order to minimize risks associated with the c ustomer's applications, the customer should provide adequate design and operating safeguards. ait semiconductor inc . assumes to no liability to customer product design or application support. ait warrants the performance of its products of the specificat ions applicable at the time of sale.
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